Fundamentals of metal-semiconductor contacts

The fundamentals of metal-semiconductor contacts are discussed. Contact resistance values for solar cells are also discussed

Creep at elevated temperatures and high vacuum Semiannual report no. 3, May 1 - Oct. 31, 1965

Creep tests on polycrystalline copper with surface reoxidized or cleaned by argon bombardment at elevated temperatures and high vacuu

Non-perturbative plaquette in 3d pure SU(3)

We present a determination of the elementary plaquette and, after the subsequent ultraviolet subtractions, of the finite part of the gluon condensate, in lattice regularization in three-dimensional pure SU(3) gauge theory. Through a change of regularization scheme to MSbar and a matching back to full four-dimensional QCD, this result determines the first non-perturbative contribution in the weak-coupling expansion of hot QCD pressure.Comment: 6 pages, 4 figures, talk presented at Lattice 2005 (Non-zero temperature and density

A simple numerical method for the calculation of the laminar boundary layer

An iteration difference method for the calculation of the incompressible laminar boundary layer is described. The method uses Prandtl's boundary layer equation and the boundary conditions directly and permits the attainment of an arbitrary accuracy. The method has been tested successfully in the continuation of the Blasius profile on the flat plate, on the circular cylinder investigated by Heimenz and on an elliptical cylinder of fineness ratio 1:4. The method makes possible the testing of previously developed methods, all of which contain important assumptions

Coherent transport in Nb/delta-doped-GaAs hybrid microstructures

Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer to protect the active semiconductor layers during ex situ transfer. The superconductor is then sputter deposited in situ after thermal desorption of the protective layer. Two types of structures in particular will be discussed, i.e., a reference junction and the engineered one that contains an additional insulating AlGaAs barrier inserted during the growth in the semiconductor. This latter configuration may give rise to controlled interference effects and realizes the model introduced by de Gennes and Saint-James in 1963. While both structures show reflectionless tunneling-dominated transport, only the engineered junction shows additionally a low-temperature single marked resonance peaks superimposed to the characteristic Andreev-dominated subgap conductance. The analysis of coherent magnetotransport in both microstructures is successfully performed within the random matrix theory of Andreev transport and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations. The impact of junction morphology on reflectionless tunneling and the application of the employed fabrication technique to the realization of complex semiconductor-superconductor systems are furthermore discussed.Comment: 9 pages, 8 figures, invited review paper, to be published in Mod. Phys. Lett.

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a forward bias level for each modulation frequency. Active participation of sub-bandgap defect states in minority carrier recombination dynamics is sought to explain the results. Negative capacitance is understood as a necessary dielectric response to compensate any irreversible transient changes in the minority carrier reservoir due to radiative recombinations mediated by slowly responding sub-bandgap defects. Experimentally measured variations of the in-phase component of modulated electroluminescence spectra with forward bias levels and modulation frequencies support the dynamic influence of these states in the radiative recombination process. Predominant negative sign of the in-phase component of voltage modulated electroluminescence signal further confirms the bi-molecular nature of light emission. We also discuss how these states can actually affect the net density of minority carriers available for radiative recombination. Results indicate that these sub-bandgap states can suppress external quantum efficiency of such devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.Comment: 5 pages, 4 figure

Yeah, Right, Uh-Huh: A Deep Learning Backchannel Predictor

Using supporting backchannel (BC) cues can make human-computer interaction more social. BCs provide a feedback from the listener to the speaker indicating to the speaker that he is still listened to. BCs can be expressed in different ways, depending on the modality of the interaction, for example as gestures or acoustic cues. In this work, we only considered acoustic cues. We are proposing an approach towards detecting BC opportunities based on acoustic input features like power and pitch. While other works in the field rely on the use of a hand-written rule set or specialized features, we made use of artificial neural networks. They are capable of deriving higher order features from input features themselves. In our setup, we first used a fully connected feed-forward network to establish an updated baseline in comparison to our previously proposed setup. We also extended this setup by the use of Long Short-Term Memory (LSTM) networks which have shown to outperform feed-forward based setups on various tasks. Our best system achieved an F1-Score of 0.37 using power and pitch features. Adding linguistic information using word2vec, the score increased to 0.39

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

2MASS J05162881+2607387: A New Low-Mass Double-Lined Eclipsing Binary

We show that the star known as 2MASS J05162881+2607387 (hereafter J0516) is a double-lined eclipsing binary with nearly identical low-mass components. The spectroscopic elements derived from 18 spectra obtained with the High Resolution Spectrograph on the Hobby-Eberly Telescope during the Fall of 2005 are K_1=88.45 +/- 0.48 km/s and K_2=90.43 +/- 0.60 km/s, resulting in a mass ratio of$q=K_1/K_2 = 0.978 +/- 0.018 and minimum masses of M_1 sin^{3}i=0.775 +/- 0.016 solar masses and M_2 sin^{3}i=0.759 +/- 0.012 solar masses, respectively. We have extensive differential photometry of J0516 obtained over several nights between 2004 January-March (epoch 1) and 2004 October-2005 January plus 2006 January (epoch 2) using the 1m telescope at the Mount Laguna Observatory. The source was roughly 0.1 mag brighter in all three bandpasses during epoch 1 when compared to epoch 2. Also, phased light curves from epoch 1 show considerable out-of-eclipse variability, presumably due to bright spots on one or both stars. In contrast, the phased light curves from epoch 2 show little out-of-eclipse variability. The light curves from epoch 2 and the radial velocity curves were analyzed using our ELC code with updated model atmospheres for low-mass stars. We find the following: M_1=0.787 +/- 0.012 solar masses, R_1=0.788 +/- 0.015 solar radii, M_2=0.770 +/- 0.009 solar masses, and R_2=0.817 +/- 0.010 solar radii. The stars in J0516 have radii that are significantly larger than model predictions for their masses, similar to what is seen in a handful of other well-studied low-mass double-lined eclipsing binaries. We compiled all recent mass and radius determinations from low-mass binaries and determine an empirical mass-radius relation of the form R = 0.0324 + 0.9343M + 0.0374M^2, where the quantities are in solar units.Comment: 16 pages, 10 figures (Figure 1 has degraded quality), to appear in Ap